september 2001 2001 fairchild semiconductor corporation FDN338P rev f (w) FDN338P p - channel 2.5v specified powertrench mosfet general description this p - channel 2.5 v specified mosfet uses fairchild?s advanced low voltage powertrench process. it has been optimized for battery power management applications. a pplications battery management load switch battery protection features ? 1.6 a, ? 20 v. r ds(on) = 115 m w @ v gs = ? 4.5 v r ds(on) = 155 m w @ v gs = ? 2.5 v fast switching speed high performance trench technology for extremely low r ds(on) super sot tm - 3 provides low r ds(on) and 30% higher power handling capability than sot23 in the same footprint g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source voltage ? 20 v v gss gate - sou rce voltage 8 v i d drain current ? continuous ? 1.6 a ? pulsed ? 5 maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ? 55 to +150 c thermal characteristics r q ja thermal resistance, junction - to - ambient (note 1a) 250 c/w r q jc thermal resistance, junction - to - case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity . 338 FDN338P 7?? 8mm 300 0 units fdn 338 p
FDN338P rev f (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = ? 250 m a ? 20 v d bv dss d t j breakdown voltage temper ature coefficient i d = ? 250 m a, referenced to 25 c ? 16 mv/ c i dss zero gate voltage drain current v ds = ? 16 v, v gs = 0 v ? 1 m a i gssf gate ? body leakage, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate ? body leakage, reverse v gs = ? 8 v , v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ? 250 m a ? 0.4 ? 0.8 ? 1. 5 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = ? 250 m a, referenced to 25 c 2.7 mv/ c r ds(on) static drain ? source on ? resistance v gs = ? 4.5 v, i d = ? 1.6 a v gs = ? 2.5 v, i d = ? 1.3 a v gs = ? 4.5 v, i d = ? 1.6 a , t j =125 c 88 117 116 1 15 1 55 165 m w i d(on) on ? state drain current v gs = ? 4.5 v, v ds = ? 5 v ? 5 a g fs forward transconductance v ds = ? 5 v, i d = ? 1.6 a 6 s dynamic characteristics c iss input capacitance 451 pf c oss output capacitance 75 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 33 pf switching character istics (note 2) t d(on) turn ? on delay time 10 20 ns t r turn ? on rise time 11 20 ns t d(off) turn ? off delay time 16 29 ns t f turn ? off fall time v dd = ? 10 v, i d = ? 1 a, v gs = ? 4.5 v, r gen = 6 w 6.5 13 ns q g total gate charge 4.4 6.2 nc q gs gate ? source charge 1.1 nc q gd gate ? drain charge v ds = ? 10 v, i d = ? 1.6 a, v gs = ? 4.5 v 0. 7 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current ? 0.42 a v sd drain ? source diode forward voltage v gs = 0 v, i s = ? 0.42 (note 2) ? 0.7 ? 1.2 v notes: 1. r q ja is the sum of the junction - t o - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 m s, duty cycle 2.0%
FDN338P rev f (w) typical characteristics 0 1 2 3 4 5 0 0.5 1 1.5 2 -v ds , drain-source voltage (v) -i d , drain current (a) -2.0v -2.5v v gs = -4.5v -3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1 2 3 4 5 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -2.5v -4.5v -3.0v -3.5v figure 1. o n - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -1.6a v gs = -4.5v 0.06 0.1 0.14 0.18 0.22 0.26 0.3 0.34 1 2 3 4 5 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -0.8 a t a = 125 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - resistance variation with gate - to - sour ce voltage. 0 1 2 3 4 5 0.5 0.75 1 1.25 1.5 1.75 2 2.25 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c v ds = - 5v 125 o c 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDN338P
FDN338P rev f (w) typical characteristics 0 1 2 3 4 5 0 1 2 3 4 5 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -1.6a v ds = -5v -15v -10v 0 100 200 300 400 500 600 0 2 4 6 8 10 12 -v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs =-4.5v single pulse r q ja = 270 o c/w t a = 25 o c 10ms 1ms 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 270c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 270 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDN338P
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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